Published June 11, 2009 | Version v1
Journal article

Evaluation of silicon-germanium (SiGe) bipolar technologies for use in an upgraded atlas detector

  • 1. Centro Nacional de Microelectronica (CNM-CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain)
  • 2. Santa Cruz Institute for Particle Physics (SCIPP), University of California Santa Cruz, Santa Cruz, CA (United States)
  • 3. Columbia University, Nevis Laboratories (United States)
  • 4. Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA (United States)
  • 5. Brookhaven National Laboratory (BNL), Upton, NY (United States)
  • 6. University of Pennsylvania, Philadelphia, PA (United States)
  • 7. Jozef Stefan Institute, Ljubljana (Slovenia)

Description

Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies promise several advantages over CMOS for the front-end readout electronics for the ATLAS upgrade. We have evaluated the relative merits of the latest generations of IBM SiGe HBT BiCMOS technologies, the 8WL and 8HP platforms. These 130 nm SiGe technologies show promise to operate at lower power than do CMOS technologies and would provide a viable alternative for the silicon strip detector and liquid argon calorimeter upgrades, provided that the radiation tolerance studies at multiple gamma and neutron irradiation levels, included in this investigation, show them to be sufficiently radiation tolerant.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2009.03.177

Additional details

Identifiers

DOI
10.1016/j.nima.2009.03.177;
PII
S0168-9002(09)00420-3;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
604
Journal Issue
3
Journal Page Range
p. 668-674
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.