Published July 1980 | Version v1
Journal article Metadata-only

Influence of fast-neutron irradiation on the properties of gallium arsenide doped with various impurities

Creators

  • 1. State Scientific-Research and Design Institute of the Rare-Metal Industry, Moscow

Description

Measurements were made of the electrical resistivity, density, and lattice parameters of gallium arsenide crystals doped with Te, Sn, and Cr as a function of the fast-neutron dose. The influence of neutron irradiation on carrier recombination was studied by recording the photoluminescence spectra before and after irradiation at temperatures of 300 and 770K. The properties after irradiation depended on the nature of the initial dopant

Additional details

Publishing Information

Journal Title
Sov. Phys. - Semicond. (Engl. Transl.)
Journal Volume
14
Journal Issue
7
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
773-775

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
13668316
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
CRYSTAL DEFECTS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; GALLIUM ARSENIDES; IMPURITIES; LOW TEMPERATURE; MEDIUM TEMPERATURE; NEUTRONS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; RECOMBINATION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BARYONS; CRYSTAL STRUCTURE; DATA; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; HADRONS; INFORMATION; LUMINESCENCE; NUCLEONS; NUMERICAL DATA; PHYSICAL PROPERTIES; RADIATION EFFECTS