Published January 25, 2016 | Version v1
Journal article

Energy bandgap variation in oblique angle-deposited indium tin oxide

  • 1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)
  • 2. Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 54896 (Korea, Republic of)
  • 3. Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

Description

Indium tin oxide (ITO) thin films deposited using the oblique angle deposition (OAD) technique exhibit a strong correlation between structural and optical properties, especially the optical bandgap energy. The microstructural properties of ITO thin films are strongly influenced by the tilt angle used during the OAD process. When changing the tilt angle, the refractive index, porosity, and optical bandgap energy of ITO films also change due to the existence of a preferential growth direction at the interface between ITO and the substrate. Experiments reveal that the ITO film's optical bandgap varies from 3.98 eV (at normal incident deposition) to 3.87 eV (at a 60° tilt angle)

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
108
Journal Issue
4
Journal Page Range
p. 041910-041910.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47059420
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CORRELATIONS; DEPOSITION; DEPOSITS; INDIUM; INTERFACES; MICROSTRUCTURE; POROSITY; REFRACTIVE INDEX; SUBSTRATES; THIN FILMS; TIN OXIDES; VARIATIONS
Descriptors DEC
CHALCOGENIDES; ELEMENTS; FILMS; METALS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TIN COMPOUNDS

Optional Information

Notes
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