Incorporation of QD ensembles in separate confinement heterostructures for long wavelength emission

This paper deals with the incorporation of temperature-sensitive InGaN quantum dot (QD) ensembles into separate confinement double heterostructures grown on free-standing GaN substrates. The laser diode (LD) structures were processed as ridge waveguide devices. The emission wavelength in electroluminescence (EL) of the 3 fold QD layers is around 485 nm. The structural quality and state of strain of the layers has been determined by high resolution X-ray diffraction (HRXRD) measurements. Current-voltage characteristics, light output power measurements and EL-spectra demonstrate the good stability of the device. A comparable small blue shift was observed with increasing excitation current (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)