Published April 2015 | Version v1
Journal article

Efficient phase contrast imaging in STEM using a pixelated detector. Part 1: Experimental demonstration at atomic resolution

  • 1. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)
  • 2. EPSRC SuperSTEM Facility, Daresbury Laboratory, Warrington WA4 4AD (United Kingdom)
  • 3. Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37830 (United States)
  • 4. Nion Co., 1102 8th St., Kirkland, WA 98033 (United States)

Description

We demonstrate a method to achieve high efficiency phase contrast imaging in aberration corrected scanning transmission electron microscopy (STEM) with a pixelated detector. The pixelated detector is used to record the Ronchigram as a function of probe position which is then analyzed with ptychography. Ptychography has previously been used to provide super-resolution beyond the diffraction limit of the optics, alongside numerically correcting for spherical aberration. Here we rely on a hardware aberration corrector to eliminate aberrations, but use the pixelated detector data set to utilize the largest possible volume of Fourier space to create high efficiency phase contrast images. The use of ptychography to diagnose the effects of chromatic aberration is also demonstrated. Finally, the four dimensional dataset is used to compare different bright field detector configurations from the same scan for a sample of bilayer graphene. Our method of high efficiency ptychography produces the clearest images, while annular bright field produces almost no contrast for an in-focus aberration-corrected probe. - Highlights: • Ptychographic high efficiency phase contrast imaging is demonstrated in STEM. • We rely on a hardware aberration corrector to eliminate aberrations. • High efficiency is achieved by collecting all the relevant interference. • Use of a pixelated detector allows comparison of bright field modes post acquisition. • Ptychography provides the clearest images among the STEM bright field modes tested

Availability note (English)

Available from http://dx.doi.org/10.1016/j.ultramic.2014.09.013

Additional details

Identifiers

DOI
10.1016/j.ultramic.2014.09.013;
PII
S0304-3991(14)00193-4;

Publishing Information

Journal Title
Ultramicroscopy (Amsterdam)
Journal Volume
151
Journal Page Range
p. 160-167
ISSN
0304-3991
CODEN
ULTRD6

Conference

Title
3. conference on frontiers of aberration corrected electron microscopy
Acronym
PICO 2015
Dates
19-23 Apr 2015
Place
Kasteel Vaalsbroek (Netherlands)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47038179
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHROMATIC ABERRATIONS; DATASETS; DIFFRACTION; EFFICIENCY; FOUR-DIMENSIONAL CALCULATIONS; FOURIER ANALYSIS; GEOMETRICAL ABERRATIONS; GRAPHENE; IMAGES; INTERFERENCE; OPTICS; RESOLUTION; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
CARBON; COHERENT SCATTERING; DOCUMENT TYPES; ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; NONMETALS; SCATTERING

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.