Published June 16, 2014
| Version v1
Journal article
Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching
- 1. Le Quy Don Technical University, No. 100, Hoang Quoc Viet Street, Hanoi 7EN-248 (Viet Nam)
- 2. Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Collaborative Innovation Center of Suzhou Nano Science and Technology, School of Electronics and Information Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049 (China)
Description
Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.
Additional details
Identifiers
- DOI
- 10.1063/1.4883880;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 24
- Journal Page Range
- p. 241907-241907.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46006059
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ETCHING; INTERFERENCE; LASER RADIATION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; STANDING WAVES; SURFACE PROPERTIES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; MICROSCOPY; RADIATIONS; SILICON COMPOUNDS; SURFACE FINISHING
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC