Published June 24, 2009 | Version v1
Journal article Metadata-only

Effect of niobium dopant on fatigue characteristics of BiFeO3 thin films grown on Pt electrodes

Creators

  • 1. Chemistry Institute, Department of Chemistry Physics, UNESP, Rua Prof. Francisco Degni, s/n, Quitandinha, CEP:14800-900, Araraquara, SP (Brazil)

Description

Pure BiFeO3 (BFO) and Nb-doped (BFN) thin films were fabricated by the soft chemical method. The films were polycrystalline when deposited on Pt/Ti/SiO2/Si substrate and annealed at 500 deg. C for 2 h. X-ray diffraction analysis revealed that the film was fully crystallized. The grain size decreased in the BFN films due the suppression of oxygen vacancy concentration in the BFO lattice. The Nb dopant is effective in improving electrical properties of BFO films. With increase niobium content we obtained thin films free of fatigue up to 108 cycles.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2009.01.074

Additional details

Identifiers

DOI
10.1016/j.jallcom.2009.01.074;
PII
S0925-8388(09)00092-9;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
479
Journal Issue
1-2
Journal Page Range
p. 274-279
ISSN
0925-8388
CODEN
JALCEU

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41051289
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; BISMUTH COMPOUNDS; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRODES; FATIGUE; FERROELECTRIC MATERIALS; GRAIN SIZE; IRON COMPOUNDS; NIOBIUM; OXIDES; SILICON OXIDES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; X-RAY DIFFRACTION
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; FILMS; HEAT TREATMENTS; MATERIALS; MECHANICAL PROPERTIES; METALS; MICROSCOPY; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; REFRACTORY METALS; SCATTERING; SILICON COMPOUNDS; SIZE; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.