Published 1998
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Defect mobility in AlxGa1-xAs at low temperatures
- 1. The Andrzej Soltan Institute for Nuclear Studies, Otwock-Swierk (Poland)
- 2. Research Center Karlsruhe, Karlsruhe (Germany)
- 3. Institute of Solid State Physics, Friedrich Schiller University (Germany)
Description
no abstract available
Files
30007883.pdf
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Additional details
Publishing Information
- Imprint Place
- Otwock-Swierk (Poland)
- Imprint Title
- Annual report 1997
- Imprint Pagination
- 202 p.
- Journal Page Range
- p. 31-32
- ISSN
- 1232-5309
- Report number
- INIS-PL--99001
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 30007883
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Progress Report
- Descriptors DEI
- ALUMINIUM ARSENIDES; BACKSCATTERING; GALLIUM ARSENIDES; ION IMPLANTATION; PROGRESS REPORT; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DOCUMENT TYPES; GALLIUM COMPOUNDS; MATERIALS; PNICTIDES; SCATTERING
Optional Information
- Notes
- 7 refs, 2 figs