Published April 29, 1972
| Version v1
Patent
A method for manufacturing semi-conducting devices by implanting ions
Creators
Description
no abstract available
Availability note (English)
Available from INPI, Paris.Additional details
Additional titles
- Original title (French)
- Procede de fabrication de dispositifs semi-conducteurs par implantation d'ions
- Augmented title (English)
- implanting of ions under energies of from 10 to 200 KeV
Publishing Information
- Imprint Pagination
- 8 p.
- IPC:
- Int. Cl. H01l7/00.
- IPC
- Int. Cl. H01l7/00.
- Patent number
- FR patent document 2180540/A/
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 6186107
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- ION IMPLANTATION; PASSIVATION; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Available from Institut National de la Propriete Industrielle, Paris (France).