Published December 6, 2011 | Version v1
Journal article

Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

  • 1. Japan Aerospace Exploration Agency, 2-1-1, Sengen, Tsukuba, 305-8505 (Japan)
  • 2. Advanced Engineering Services Co. Ltd, 1-6-1, Takezono, Tsukuba (Japan)
  • 3. Japan Manned Space Systems Corporation, 1-1-26, Kawaguchi, Tsuchiura (Japan)
  • 4. Space Engineering Development Co. Ltd., 1-12-2, Takezono, Tsukuba (Japan)
  • 5. Japan Space Forum, 2-2-1, Otemachi, Chiyoda-ku, Tokyo (Japan)
  • 6. Inet Corporation, 5-19-6, Shikatebukuro, Minami-ku, Saitama (Japan)

Description

Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si0.5Ge0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si0.5Ge0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/327/1/012017

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
327
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
1742-6596

Conference

Title
International symposium on physical sciences in space
Dates
11-15 Jul 2011
Place
Bonn (Germany)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43092346
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CONVECTION; CRYSTAL GROWTH; CRYSTAL GROWTH METHODS; CRYSTALS; GERMANIUM SILICIDES; HEATING; VARIATIONS; WEIGHTLESSNESS
Descriptors DEC
ENERGY TRANSFER; GERMANIUM COMPOUNDS; HEAT TRANSFER; MASS TRANSFER; SILICIDES; SILICON COMPOUNDS