Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method
Creators
- 1. Japan Aerospace Exploration Agency, 2-1-1, Sengen, Tsukuba, 305-8505 (Japan)
- 2. Advanced Engineering Services Co. Ltd, 1-6-1, Takezono, Tsukuba (Japan)
- 3. Japan Manned Space Systems Corporation, 1-1-26, Kawaguchi, Tsuchiura (Japan)
- 4. Space Engineering Development Co. Ltd., 1-12-2, Takezono, Tsukuba (Japan)
- 5. Japan Space Forum, 2-2-1, Otemachi, Chiyoda-ku, Tokyo (Japan)
- 6. Inet Corporation, 5-19-6, Shikatebukuro, Minami-ku, Saitama (Japan)
Description
Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si0.5Ge0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si0.5Ge0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/327/1/012017Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 327
- Journal Issue
- 1
- Journal Page Range
- [6 p.]
- ISSN
- 1742-6596
Conference
- Title
- International symposium on physical sciences in space
- Dates
- 11-15 Jul 2011
- Place
- Bonn (Germany)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43092346
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CONVECTION; CRYSTAL GROWTH; CRYSTAL GROWTH METHODS; CRYSTALS; GERMANIUM SILICIDES; HEATING; VARIATIONS; WEIGHTLESSNESS
- Descriptors DEC
- ENERGY TRANSFER; GERMANIUM COMPOUNDS; HEAT TRANSFER; MASS TRANSFER; SILICIDES; SILICON COMPOUNDS