Published July 2006 | Version v1
Journal article Metadata-only

The influence of gamma-radiation on relaxing properties of doped vanadium crystals TIInS2

Creators

  • 1. ANAS, Institute of Radiation Problems, Baku (Azerbaijan)

Description

The influence of gamma-radiation on relaxing properties of TIIns2 compound has been studied. it has been established that the Fogel-Fulcher temperature shifts to the side of low temperatures in this compound, and Bernce temperature shifts to the side of high temperatures. in the result, the temperature interval of existence of relaxing state becomes wider on 40 K

Additional details

Publishing Information

Journal Title
Fizika (Baku)
Journal Volume
12
Journal Issue
1-2
Journal Page Range
p. 15-17
ISSN
1028-8546

INIS

Country of Publication
Azerbaijan
Country of Input or Organization
Azerbaijan
INIS RN
47013950
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
CRYSTAL GROWTH METHODS; CRYSTALS; DATA ANALYSIS; EVALUATED DATA; GAMMA RADIATION; INDIUM; PHASE TRANSFORMATIONS; RELAXATION; SAMPLE PREPARATION; SPECTRA; TEMPERATURE DEPENDENCE; VANADIUM
Descriptors DEC
DATA; DATA PROCESSING; ELECTROMAGNETIC RADIATION; ELEMENTS; INFORMATION; IONIZING RADIATIONS; METALS; NUMERICAL DATA; PROCESSING; RADIATIONS; TRANSITION ELEMENTS

Optional Information

Notes
2 figs; 14 refs
Collaborations
Azerbaijan National Academy of Sciences, Institute of Physics, Department of Physical, Mathematical and Technical Sciences Baku (AZ)