Published June 21, 1993
| Version v1
Journal article
Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors with improved stability
- 1. University of Illinois at Urbana-Champaign, Materials Research Laboratory and Coordinated Science Laboratory, 104 South Goodwin Avenue, Urbana, Illinois 61801 (United States)
Description
We report on the electrical characteristics of in situ deposited Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors (MISFETs). MISFETs with 2.2-μm gate lengths fabricated by a self-aligned gate process exhibited extrinsic transconductances of over 200 mS/mm. The drain current drifted by only 1% during the first 10 h of operation. This small shift is attributed to the reduction of traps at the interface by a pseudomorphic Si layer, incorporated at the interface between the dielectric and the In0.53Ga0.47As channel
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 62
- Journal Issue
- 25
- Journal Page Range
- p. 3291-3293.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24061474
- Subject category
- S42: ENGINEERING; S36: MATERIALS SCIENCE;
- Descriptors DEI
- BUFFERS; DESIGN; ELECTRICAL PROPERTIES; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; SILICON NITRIDES; TERNARY ALLOY SYSTEMS; TRAPS
- Descriptors DEC
- ALLOY SYSTEMS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS