A channeling investigation of proton and deuteron damage in germanium

The amount of damage present in germanium (and silicon) following implants of 200 keV H+ or 300 keV D+ at temperatures between 40 and 3000K has been measured using the channeling technique. The damage level is observed to increase strongly with decreasing implantation temperature. Damage profiles were obtained from the data by considering various scattering mechanisms, including single and plural scattering and a steady increase approximation treatment. For equal dose implants, duetrons create considerably more damage to germanium than protons. The ratio of deuteron damage to proton damage is significantly greater than the ratio of energy deposited in nuclear events for the two ions. The results of isochronal anneals at temperatures from 40 to 325K on Ge crystals implanted at 400K are also reported. A strong annealing stage is observed around 1750K; this is in good agreement with previous optical absorption studies of proton damage in germanium. (author)