Published 1984 | Version v1
Miscellaneous Metadata-only

Comparison of the elastic properties of silicon-wafers before and after ion-implantation

Creators

  • 1. Technische Univ., Vienna (Austria). Inst. fuer Allgemeine Physik
  • 2. Hochschule fuer Radiotechnik, Minsk (USSR)

Description

The influence of ion-implantation on the elastic properties of Si has been determined quantitatively by means of a resonance method. The experimental setup as well as first measurements of the increase of Young's modulus effective in the Si-(1,1,1)-plane in dependence on energy and dose of the implanted P-ions are presented. (Author)

Part of:
Strict control of atomic energy use in South Africa

Additional details

Publishing Information

Imprint Title
SASP '84: Symposium on atomic and surface physics
Imprint Pagination
407 p.
Journal Page Range
p. 299-304.
Report number
INIS-mf--9006

Conference

Title
Symposium on atomic and surface physics.
Acronym
SASP '84
Dates
29 Jan - 4 Feb 1984.
Place
Maria Alm (Austria).

INIS

Country of Publication
Austria
Country of Input or Organization
Austria
INIS RN
15030670
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELASTICITY; ION IMPLANTATION; KEV RANGE 10-100; MATHEMATICAL MODELS; MECHANICAL VIBRATIONS; PHOSPHORUS IONS; SILICON; YOUNG MODULUS
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; MECHANICAL PROPERTIES; SEMIMETALS

Optional Information