Published 1995
| Version v1
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Neutralization of boron in Si by hot Ar+ ion bombardment
- 1. Institute of Semiconductor Physics, Novosibirsk, (Russian Federation)
Description
Short communication
Files
28080478.pdf
Files
(24.6 kB)
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Additional details
Publishing Information
- Publisher
- Accademic Press.
- Imprint Title
- Ninth international conference on ion beam modification of materials. Book of abstracts
- Imprint Pagination
- 452 p.
- Journal Page Range
- p. 10025.
- Report number
- INIS-AU--0004
Conference
- Title
- 9. international conference on ion beam modification of materials.
- Acronym
- IBMM'95
- Dates
- 5-10 Feb 1995.
- Place
- Canberra (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28080478
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; ARGON IONS; ATOMIC DISPLACEMENTS; BORON IONS; CRYSTAL DEFECTS; DOPED MATERIALS; HALL EFFECT; IRRADIATION; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; IONS; MATERIALS; RADIATION EFFECTS; SEMIMETALS