TEM and channelling analysis of defects induced by electron pulses in implanted and unimplanted (100) silicon

Transmission electron microscopy and MeV He+ ion channelling spectrometry have been used to analyse both implanted and unimplanted (100) Si crystals after irradiation with nanosecond electron pulses. The formation of damaged layers containing high densities of dislocations has been observed for deposited energy densities above 0.6J/cm2 for single crystals, though above 1J/cm2 for implanted samples. The dislocation penetration increases with increasing energy density. There is an excellent correlation between the different types of structural information given by the different analytical techniques. (author)