Published January 29, 2001 | Version v1
Journal article Metadata-only

Energy dispersive x-ray analysis using a microcalorimeter detector

Creators

  • 1. Center for Advanced Thin Film Technology, University at Albany, Albany, New York 12203 (United States)
  • 2. National Institute of Standards and Technology (NIST), Boulder, Colorado 80303 (United States)

Description

The application of microcalorimeter-based energy dispersive x-ray spectroscopy (EDS) analysis to high-performance integrated circuit (IC) barrier layers for copper metallization is presented. Microcalorimeter EDS analysis of ternary TaSiN films are compared to that carried out using conventional Si(Li) EDS detectors. The elimination of elemental peak overlaps provided by the improved energy resolution of the microcalorimeter-based detector is demonstrated for the TaSiN spectra and is used to examine the efficacy of such an approach for electron microscopy-based compositional analysis of ultra-thin barrier films currently being investigated for giga-scale ICs

Additional details

Identifiers

DOI
10.1063/1.1354434;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
550
Journal Issue
1
Journal Page Range
p. 412-415
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
IEEE international conference on characterization and metrology for ULSI technology
Dates
26-29 Jun 2000
Place
Gaithersburg, MD (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35071792
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CALORIMETRY; CHEMICAL ANALYSIS; COPPER; ENERGY RESOLUTION; FILMS; INTEGRATED CIRCUITS; LAYERS; MEASURING METHODS; PERFORMANCE; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON NITRIDES; TANTALUM NITRIDES; X RADIATION; X-RAY SPECTROSCOPY
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRONIC CIRCUITS; ELEMENTS; IONIZING RADIATIONS; METALS; MICROELECTRONIC CIRCUITS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATIONS; REFRACTORY METAL COMPOUNDS; RESOLUTION; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
(c) 2001 American Institute of Physics.