Published January 2009
| Version v1
Journal article
On the issue of practical application of the mathematical model of the process of semiconductor crystal oxidation
- 1. Georgian Technical University, Tbilisi (Georgia)
Description
The problems of the growth of homogeneous, anisotropic oxide layer and the distribution of oxidant molecules in it are considered for the case when the interface between the oxide and the semiconductor crystal is a plane. The iteration method of solution of the given problems was developed. The algorithm for numerical realization of the obtained solutions was composed. (author)
Additional details
Publishing Information
- Journal Title
- Georgian Engineering News (GEN)
- Journal Issue
- n.1,2009
- Journal Page Range
- p. 13-17
- ISSN
- 1512-0287
INIS
- Country of Publication
- Georgia
- Country of Input or Organization
- Georgia
- INIS RN
- 49042974
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALGORITHMS; ANISOTROPY; CRYSTAL GROWTH; CRYSTALS; DISTRIBUTION; INTERFACES; LAYERS; MATHEMATICAL MODELS; MATHEMATICAL SOLUTIONS; MOLECULES; OXIDATION; OXIDES; SEMICONDUCTOR MATERIALS; SOLUTIONS
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; DISPERSIONS; HOMOGENEOUS MIXTURES; MATERIALS; MATHEMATICAL LOGIC; MIXTURES; OXYGEN COMPOUNDS
Optional Information
- Notes
- 3 refs., 1 fig.