Controllable deposition of regular lead iodide nanoplatelets and their photoluminescence at room temperature
Creators
- 1. Key Laboratory of Advanced Transducers and Intelligent Control System (Ministry of Education), College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 310024 (China)
- 2. College of Information Engineering, Taiyuan University of Technology, Taiyuan 310024 (China)
Description
Highlights: • We synthesized regular single crystalline PbI2 nanoplatelets based on the physical vapor phase deposition method. • The influences of the substrate location and furnace temperature on the morphologies of PbI2 nanoplatelets are carried out. • The rules of size, thickness, density of the lead iodide nanoplatelets at varied deposition conditions are analyzed. • We measured the PL spectra of lead iodide nanoplatelets at room temperature. • Pumping power dependent PL measurement indicates two apparent emission peaks are produced by the PbI2 nanoplatelets. In this work, the synthesis of regular single crystalline lead iodide nanoplatelets are carried out based on the physical vapor phase deposition method. Different lead iodide nanoplatelets are obtained by tuning the location of the mica substrate along with the temperature of the tube furnace. The rules of size, thickness, density of the lead iodide nanoplatelets at varied deposition conditions are analyzed according to the crystal growth principles. It was claimed in literature that the photoluminescence of lead iodide could be obtained only at a low temperature (lower than 200 K). Here, at room temperature, we successfully obtained the photoluminescence spectra of the prepared lead iodide nanoplatelets, which possess two apparent peaks due to the biexcitons and the inelastic scattering of excitons, respectively. Our present study contributes to the development of nanoscaled high performance optoelectronic devices.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physe.2017.10.021Additional details
Identifiers
- DOI
- 10.1016/j.physe.2017.10.021;
- PII
- S1386947717314868;
Publishing Information
- Journal Title
- Physica E. Low-Dimensional Systems and Nanostructures (Print)
- Journal Volume
- 97
- Journal Page Range
- p. 130-135
- ISSN
- 1386-9477
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53017066
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CRYSTAL GROWTH; INELASTIC SCATTERING; LEAD IODIDES; MICA; MONOCRYSTALS; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THICKNESS; VAPORS
- Descriptors DEC
- CRYSTALS; DIMENSIONS; ELECTRONIC EQUIPMENT; EMISSION; EQUIPMENT; FLUIDS; GASES; HALIDES; HALOGEN COMPOUNDS; IODIDES; IODINE COMPOUNDS; LEAD COMPOUNDS; LEAD HALIDES; LUMINESCENCE; MINERALS; OPTICAL EQUIPMENT; PHOTON EMISSION; SCATTERING; SILICATE MINERALS; TEMPERATURE RANGE; TRANSDUCERS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier B.V. All rights reserved.