Published April 1991 | Version v1
Journal article Metadata-only

Radiation damage in As+ implanted TiSi2 films

Creators

  • 1. Dept. of Materials Science and Engineering, National Tsing Hua Univ., Hsinchu (Taiwan)

Description

Radiation damage in C54-TiSi2 film implanted by 80 keV, 5x1015 cm-2 As+ has been studied by both cross-sectional and planview transmission electron microscopy as well as by four-point probe resistivity measurements. Phase reversion from C54-TiSi2 to C49-TiSi2 was observed in as-implanted samples. The electrical resistivity of implanted samples was found to decrease with annealing temperature and time. Phase transition from C49-TiSi2 to C54-TiSi2 and decrease in the density of residual defects were found to correlate with the decrease in electrical resistivity. (orig.)

Additional details

Additional titles

Augmented title (English)
TiSi_2:As"+

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research, Section B
Journal Volume
55
Journal Issue
1-4
Series
Nucl. Instrum. Methods Phys. Res., Sect. B.
Journal Page Range
758-762
ISSN
0168-583X
CODEN
NIMBE

Conference

Title
8. international conference on ion implantation technology (IIT-8).
Dates
30 Jul - 3 Aug 1990.
Place
Guildford (UK).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
22083759
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; ARSENIC IONS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; IMPLANTS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE; THIN FILMS; TITANIUM SILICIDES; TRANSMISSION ELECTRON MICROSCO; VERY HIGH TEMPERATURE
Descriptors DEC
CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; FILMS; HEAT TREATMENTS; IONS; MICROSCOPY; PHYSICAL PROPERTIES; RADIATION EFFECTS; SCATTERING; SILICIDES; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS