Published December 5, 2006 | Version v1
Journal article

An isochronal kinetic study of intermetallic compound growth in Sn/Cu thin film couples

  • 1. Department of Materials Science and Engineering, National Tsing-Hua University, 101 Sec. 2 Kuang-Fu Rd., Hsinchu, Taiwan 30013 (China)

Description

Growth kinetics of Cu6Sn5 and Cu3Sn compounds in Cu/Sn thin film couples was studied by in situ resistivity measurements and X-ray diffraction analysis. The Cu6Sn5 and Cu3Sn intermetallic compounds were found to form in sequence when the Cu/Sn bimetallic samples were isochronally annealed from room temperature to 220 deg. C. A kinetic model was presented to explain sequential appearance of the Cu6Sn5 phase and the Cu3Sn phase during the isochronal annealing process. The activation energies of Cu6Sn5 and Cu3Sn compound growth in Cu/Sn thin film couples were determined from the in situ resistivity measurements to be 0.87 eV and 1.05 eV, respectively

Additional details

Identifiers

DOI
10.1016/j.tsf.2006.05.025;
PII
S0040-6090(06)00670-5;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
515
Journal Issue
4
Journal Page Range
p. 2781-2785
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.