Published February 16, 1983
| Version v1
Journal article
Determination of electron depth-dose function for kilovolt electrons on GaAsP
Creators
- 1. Humboldt-Universitaet, Berlin (German Democratic Republic). Sektion Physik
Description
A new technique to determine the depth-dose function is described using the measurement of the electron beam induced barrier current on bevelled homo p-n junction structures. A universal depth-dose function on GaAsP is found in the investigated energy range from 10 to 45 keV. The distance of the maximum under the surface can be obtained by the relation a = A0E/sub P/sup /1.65/ with A0 = 2.95 x 10-3 (E/sub Pr/ in keV, a in μm). (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 75
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 547-553
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 14769932
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARSENIC COMPOUNDS; DEPTH DOSE DISTRIBUTIONS; ELECTRON BEAMS; ELECTRON MICROPROBE ANALYSIS; EPITAXY; GALLIUM PHOSPHIDES; KEV RANGE 10-100; P-N JUNCTIONS; PHOSPHIDES; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- BEAMS; CHEMICAL ANALYSIS; DISTRIBUTION; ENERGY RANGE; GALLIUM COMPOUNDS; KEV RANGE; LEPTON BEAMS; NONDESTRUCTIVE ANALYSIS; PARTICLE BEAMS; PHOSPHORUS COMPOUNDS; RADIATION DOSE DISTRIBUTIONS; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SPATIAL DISTRIBUTION; SPATIAL DOSE DISTRIBUTIONS