Influence of structural defects and zinc composition variation on the device response of Cd1-xZnxTe radiation detectors
Creators
- 1. Univ. of California, Los Angeles, CA (United States). Dept. of Materials Science and Engineering
- 2. Carnegie Mellon Univ., Pittsburgh, PA (United States). Dept. of Electrical and Computer Engineering
- 3. Sandia National Labs., Livermore, CA (United States)
Description
Zinc composition variation and gross structural defects including grain and tilt boundaries, twins, and mechanical cracks in high pressure Bridgman Cd1-xZnxTe are characterized and correlated to various detector-related responses. Triple axis X-ray diffraction, double crystal X-ray topography, infrared microscopy, and etch pit density measurements are used to reveal and quantify the spatial distribution and the nature of the structural defects. Mechanical cracks in the material are found to act as conductive ''shorting paths,'' indicated by excessive leakage currents and reduced charge (electron) collection measured along these cracks. Reduced charge collection is also obtained across grain boundaries and in regions with poor crystallinity, indicating that they serve as carrier recombination sites. Finally, the effects of the zinc composition variation on the measured leakage current and the amount of electrons collected are found to be masked by gross structural defects. These characterization techniques provide a wealth of information which can be used not only to study the relationship between the structural and device properties of CdZnTe but also to screen production material for subsequent device fabrication
Additional details
Publishing Information
- Publisher
- Materials Research Society
- Imprint Place
- Warrendale, PA (United States)
- ISBN
- 1-55899-392-4
- Imprint Title
- Semiconductors for room-temperature radiation detector applications 2
- Imprint Pagination
- 681 p.
- Series
- Materials Research Society symposium proceedings, Volume 487
- Journal Page Range
- p. 115-120
- ISSN
- 0272-9172
Conference
- Title
- 1997 fall meeting of the Materials Research Society
- Dates
- 1-5 Dec 1997
- Place
- Boston, MA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30034727
- Subject category
- S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- CADMIUM TELLURIDES; CHARGE COLLECTION; CRACKS; CRYSTAL DEFECTS; ELECTRICAL PROPERTIES; EXPERIMENTAL DATA; MICROSTRUCTURE; RESPONSE FUNCTIONS; SEMICONDUCTOR DETECTORS; ZINC TELLURIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; DATA; FUNCTIONS; INFORMATION; MEASURING INSTRUMENTS; NUMERICAL DATA; PHYSICAL PROPERTIES; RADIATION DETECTORS; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Funding organization
- USDOE, Washington, DC (United States)
- Secondary number(s)
- CONF-971201--