Published June 1, 2010 | Version v1
Journal article

Monocrystalline zinc oxide films grown by atomic layer deposition

  • 1. Polish Academy of Sciences, Institute of Physics, al. Lotnikow 32/46, Warszawa 02-668 (Poland)
  • 2. Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Warszawa (Poland)
  • 3. Institute of Electron Technology (ITE), al. Lotnikow 32/46, Warsaw 02-668 (Poland)

Description

In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 oC using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07o. Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2009.12.030

Additional details

Identifiers

DOI
10.1016/j.tsf.2009.12.030;
PII
S0040-6090(09)02012-4;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
518
Journal Issue
16
Journal Page Range
p. 4556-4559
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
Synthesis, processing and characterization of nanoscale multi functional oxide films II
Acronym
EMRS 2009 spring meeting Symposium H
Dates
8-12 Jun 2009
Place
Strasbourg (France)

INIS

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.