Published 1990 | Version v1
Book Metadata-only

Modified optically detected magnetic resonance technique for studies of defects in Si and GaAs

Creators

  • 1. Dept. of Physics and Measurement Technology, Linkoping Univ., S-581 83 Linkoping (Sweden)

Description

The authors discuss one of the major difficulties, namely the strong free carrier induced background signal, in studies of defects in Si and GaAs by optically detected magnetic resonance (ODMR) technique. A modified ODMR technique, namely delayed ODMR, is presented and is shown to be very successful in overcoming this difficulty

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-051-8
Imprint Title
Impurities, defects and diffusion in semiconductors
Imprint Pagination
1050 p.
Journal Page Range
p. 85-88.

Conference

Title
Materials Research Society fall meeting.
Dates
27 Nov - 2 Dec 1989.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22015662
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CARRIER DENSITY; CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; HETEROJUNCTIONS; NUCLEAR MAGNETIC RESONANCE; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SILICON
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELEMENTS; GALLIUM COMPOUNDS; MAGNETIC RESONANCE; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; RESONANCE; SEMICONDUCTOR JUNCTIONS; SEMIMETALS

Optional Information

Secondary number(s)
CONF-891119--.