Published November 27, 2014
| Version v1
Journal article
Activation of piezoelectric property of PZT thin films by pulse poling
- 1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564,Japan (Japan)
- 2. Tokyo Institute of Technology, Yokohama, Kanagawa 226-8502 (Japan)
Description
We have demonstrated the pulse poling technique to activate the piezoelectric property of PZT thin films within 1 second. We have fabricated piezoelectric microcantilevers with Si proof mass using Pb(Zr0.52,Ti0.48)O3 (MPB-PZT) thin films. By applying 1 kHz and 100 V of unipolar triangle pulse voltage, the positive piezoelectric constant |d31| of PZT thin film has been enhanced as high as 95 pm/V, which is larger than dc poled PZT thin films (67 pm/V)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/557/1/012130Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 557
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1742-6596
Conference
- Title
- 14. International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications
- Acronym
- PowerMEMS 2014
- Dates
- 18-21 Nov 2014
- Place
- Awaji Island, Hyogo (Japan)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47014717
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC POTENTIAL; KHZ RANGE; PIEZOELECTRICITY; PULSES; PZT; SILICON; THIN FILMS
- Descriptors DEC
- ELECTRICITY; ELEMENTS; FILMS; FREQUENCY RANGE; LEAD COMPOUNDS; OXYGEN COMPOUNDS; SEMIMETALS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONATES; ZIRCONIUM COMPOUNDS