Published 1981
| Version v1
Journal article
Vacancy capture at 111In in electron irradiated niobium
Creators
- 1. Freie Univ. Berlin (Germany, F.R.)
- 2. Hahn-Meitner-Institut fuer Kernforschung Berlin G.m.b.H. (Germany, F.R.)
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Leerstelleneinfang am
Publishing Information
- Journal Title
- Verh. Dtsch. Phys. Ges.
- Journal Volume
- 16
- Journal Issue
- 3
- Series
- Verh. Dtsch. Phys. Ges.
- Journal Page Range
- 328
- ISSN
- 0420-0195
Conference
- Title
- Spring meeting of the technical committee on semiconductor physics.
- Dates
- 9 - 14 Mar 1981.
- Place
- Muenster, Germany, F.R.
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 12639705
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; ELECTRON BEAMS; FOILS; INDIUM 111; ION IMPLANTATION; NIOBIUM; NUCLEAR REACTIONS; PERTURBED ANGULAR CORRELATION; RADIATION EFFECTS; VACANCIES
- Descriptors DEC
- ANGULAR CORRELATION; BEAMS; BETA DECAY RADIOISOTOPES; CORRELATIONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DAYS LIVING RADIOISOTOPES; ELECTRON CAPTURE RADIOISOTOPES; ELEMENTS; HEAT TREATMENTS; INDIUM ISOTOPES; INTERMEDIATE MASS NUCLEI; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; LEPTON BEAMS; METALS; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-EVEN NUCLEI; PARTICLE BEAMS; POINT DEFECTS; RADIOISOTOPES; TRANSITION ELEMENTS
Optional Information
- Notes
- Published in summary form only.