Application of epitaxial crystal growth on silicon radiation detectors

Silicon radiation detectors produced by application of epitaxial crystal growth are reviewed. The epitaxial crystal growth technique is well developed and widely used in semiconductor industries. Therefore, the thickness and the resistivety of the epitaxial silicon layer are well controlled with good uniformities and reproducibilities. The very thin dE epitaxial silicon detector and the integrated E-dE detector are developed based on the uniformity of the thickness of the silicon layer. The epitaxial silicon position sensitive detector is also produced based not only on the uniformity but also on the controllability od resistivity of the epitaxial silicon layer. (orig.)