Published January 2010
| Version v1
Journal article
Regulation of defect creation in ZnO p-type films by RBQE method
Creators
- 1. I. Javakhishvili Tbilisi State University, Tbilisi (Georgia)
Description
The acceptor bound exciton in the p-type ZnO layers obtained by RBQE exhibit high purity and perfect structure, which is one of the most important issues in the production of wide band gap type II-VI materials. The concept implemented in RBQE has the potential for future applications where compounds with two components like ZnS, ZnSe, GaN, Al2O3 etc. (one metal, another non-metal) are required. By the RBQE method were obtained the blue light emitting diode on the basis of Au-ZnO-ZnSe- in system of crystals growth. (author)
Additional details
Publishing Information
- Journal Title
- Nano Studies
- Journal Issue
- n.1,2010
- Journal Page Range
- p. 11-18
- ISSN
- 1987-8826
INIS
- Country of Publication
- Georgia
- Country of Input or Organization
- Georgia
- INIS RN
- 50019229
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; BASES; CRYSTAL GROWTH; DEFECTS; EXCITONS; FILMS; GALLIUM NITRIDES; IMPURITIES; LAYERS; LIGHT EMITTING DIODES; MATERIALS; METALS; NONMETALS; POTENTIALS; REGULATIONS; ZINC OXIDES; ZINC SELENIDES; ZINC SULFIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; GALLIUM COMPOUNDS; INORGANIC PHOSPHORS; LAWS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOSPHORS; PNICTIDES; QUASI PARTICLES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SULFIDES; SULFUR COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- 20 refs., 7 figs., 1tab.