The development of titanium silicide–boron-doped polysilicon resistive temperature sensors

Thin films of titanium silicide (TiSi2) formed on heavily boron-doped polycrystalline silicon (poly-Si/B+) were applied for the first time for resistive temperature sensing. The temperature sensors exhibited a high-temperature coefficient of resistance of 3.8 × 10−3 °C−1, a linear dependence of resistance on temperature and an excellent thermal and electrical stability up to 800 °C. This work discusses the fabrication method and the morphological and electrical characterization of the TiSi2/poly-Si thin film resistors throughout the stages of its formation.