Lithium hydroxide doped tris(8-hydroxyquinoline) aluminum as an effective interfacial layer in inverted bottom-emission organic light-emitting diodes
Description
Lithium hydroxide doped tris(8-hydroxyquinoline) aluminum (Alq3:LiOH) is used as an effective interfacial layer for the fabrication of efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs). When 15% LiOH was doped into an Alq3 electron-transporting layer, the device properties such as the turn-on voltage, maximum luminance, and device efficiency improved, becoming better than those obtained with LiF doping and comparable to those of β-naphthylphenylbiphenyl diamine (NPB)/Alq3-based OLEDs with conventional geometry. Electrical analysis reveals that LiOH-doped Alq3 layers have an enhanced electron injection and transport ability. X-ray and ultraviolet photoelectron spectroscopy results clearly show that the dipole layer formed at the indium tin oxide (ITO)/organic interface contributed to the reduction of the ITO work function, resulting in a decrease of the electron injection barrier. The enhanced electron injection and transport efficiency improves the charge carrier balance in IBOLEDs and leads to better device efficiency. Furthermore, improved morphology of the organic layer can be obtained by doping LiOH into Alq3, which improves device operational stability under thermal stress. - Highlights: • Inverted bottom-emission organic light-emitting diodes with Alq3:LiOH interfacial layer were investigated. • Alq3:LiOH layers possess an enhanced electron injection and transporting ability. • The dipole layer is formed at the Alq3:LiOH/indium tin oxide interface. • Alq3:LiOH interfacial layer stabilizes the surface morphology of the Alq3 film
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2014.05.025Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2014.05.025;
- PII
- S0040-6090(14)00560-4;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 570
- Journal Issue
- Part B
- Journal Page Range
- p. 510-515
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- International thin films conference
- Acronym
- TACT 2013
- Dates
- 5-9 Oct 2013
- Place
- Taipei, Taiwan (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47004301
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM COMPOUNDS; CHARGE CARRIERS; DOPED MATERIALS; ELECTRON BEAM INJECTION; INTERFACES; LAYERS; LIGHT EMITTING DIODES; LITHIUM FLUORIDES; LITHIUM HYDROXIDES; MORPHOLOGY; OXINE; PHOTOELECTRON SPECTROSCOPY; QUINOLINES; SURFACES; THERMAL STRESSES; THIN FILMS; TIN OXIDES; ULTRAVIOLET RADIATION; WORK FUNCTIONS
- Descriptors DEC
- ALKALI METAL COMPOUNDS; AROMATICS; AZAARENES; AZINES; BEAM INJECTION; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; FILMS; FLUORIDES; FLUORINE COMPOUNDS; FUNCTIONS; HALIDES; HALOGEN COMPOUNDS; HETEROCYCLIC COMPOUNDS; HYDROGEN COMPOUNDS; HYDROXIDES; HYDROXY COMPOUNDS; LITHIUM COMPOUNDS; LITHIUM HALIDES; MATERIALS; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PYRIDINES; QUINOLINES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTROSCOPY; STRESSES; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.