Published February 28, 2011 | Version v1
Journal article

Random phase mask as a model of rough surface. Part I. Theory

Description

There have been numerous attempts to correlate light scattering measurements with the characteristics of surface roughness. Another but considerably more difficult approach is to solve the inverse scattering problem. A number of different empirical models of surface roughness have been used to characterize surfaces including the sine grating, triangle grating (echelette), and rectangle grating. In this paper, we use, for the first time, the random phase mask model, which is a two-dimension orthogonal grating with a stochastic distribution of square 'defects' with size a. We describe our calculations of the polarizing characteristics of the random phase mask and discuss the influence of each of the parameters of defects on polarizing angles. The analysis was carried out for multiple-angles-of-incidence ellipsometric measurements.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2010.11.070

Additional details

Identifiers

DOI
10.1016/j.tsf.2010.11.070;
PII
S0040-6090(10)01614-7;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
519
Journal Issue
9
Journal Page Range
p. 2718-2721
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
5. international conference on spectroscopic ellipsometry
Dates
23-28 May 2010
Place
Albany, NY (United States)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42072113
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL DEFECTS; DISTRIBUTION; ELLIPSOMETRY; GRATINGS; INCIDENCE ANGLE; INVERSE SCATTERING PROBLEM; LIGHT SCATTERING; OPTICAL PROPERTIES; RANDOMNESS; ROUGHNESS; STOCHASTIC PROCESSES; SURFACES
Descriptors DEC
CRYSTAL STRUCTURE; MEASURING METHODS; PHYSICAL PROPERTIES; SCATTERING; SURFACE PROPERTIES

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.