Random phase mask as a model of rough surface. Part I. Theory
Creators
Description
There have been numerous attempts to correlate light scattering measurements with the characteristics of surface roughness. Another but considerably more difficult approach is to solve the inverse scattering problem. A number of different empirical models of surface roughness have been used to characterize surfaces including the sine grating, triangle grating (echelette), and rectangle grating. In this paper, we use, for the first time, the random phase mask model, which is a two-dimension orthogonal grating with a stochastic distribution of square 'defects' with size a. We describe our calculations of the polarizing characteristics of the random phase mask and discuss the influence of each of the parameters of defects on polarizing angles. The analysis was carried out for multiple-angles-of-incidence ellipsometric measurements.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2010.11.070Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2010.11.070;
- PII
- S0040-6090(10)01614-7;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 519
- Journal Issue
- 9
- Journal Page Range
- p. 2718-2721
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 5. international conference on spectroscopic ellipsometry
- Dates
- 23-28 May 2010
- Place
- Albany, NY (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42072113
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; DISTRIBUTION; ELLIPSOMETRY; GRATINGS; INCIDENCE ANGLE; INVERSE SCATTERING PROBLEM; LIGHT SCATTERING; OPTICAL PROPERTIES; RANDOMNESS; ROUGHNESS; STOCHASTIC PROCESSES; SURFACES
- Descriptors DEC
- CRYSTAL STRUCTURE; MEASURING METHODS; PHYSICAL PROPERTIES; SCATTERING; SURFACE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.