Published May 2009
| Version v1
Journal article
Effect of laser plasma X-ray irradiation on nucleation in amorphous silicon film
Creators
- 1. Univ. of Hyogo, Dept. of Materials Science and Chemistry, Himeji, Hyogo (Japan)
- 2. Univ. of Hyogo, Laboratory of Advanced Science and Technology for Industry, Kamigori, Hyogo (Japan)
Description
The effects of laser plasma X-ray (LPX) irradiation on amorphous silicon (a-Si) film structure and the density of states around the edge of the valence and conduction bands were investigated for low-temperature crystallization. An LPX with a photon energy of 115 eV was generated by a Nd:YAG excitation laser using solid Xe. The Raman spectra of a-Si films were not changed by LPX irradiation. However, the optical transmittance of a-Si film was increased by LPX irradiation at approximately 570 nm. This phenomenon relates to the movement of Si atoms to the quasi-nuclei phase in a-Si film. (author)
Availability note (English)
Available from http://dx.doi.org/10.1143/JJAP.48.050208Additional details
Identifiers
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics
- Journal Volume
- 48
- Journal Issue
- 5,pt.1
- Journal Page Range
- p. 050208.1-050208.2
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 40088395
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; BAND THEORY; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALLIZATION; FILMS; IRRADIATION; LASER-PRODUCED PLASMA; NEODYMIUM LASERS; NUCLEATION; OPACITY; PHASE STUDIES; RAMAN SPECTRA; SILICON; SOFT X RADIATION; SPECTROPHOTOMETRY; WAVELENGTHS
- Descriptors DEC
- CHEMICAL COATING; DEPOSITION; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONIZING RADIATIONS; LASERS; OPTICAL PROPERTIES; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; PLASMA; RADIATIONS; SEMIMETALS; SOLID STATE LASERS; SPECTRA; SURFACE COATING; X RADIATION
Optional Information
- Notes
- 6 refs., 3 figs.