Published May 2009 | Version v1
Journal article

Effect of laser plasma X-ray irradiation on nucleation in amorphous silicon film

  • 1. Univ. of Hyogo, Dept. of Materials Science and Chemistry, Himeji, Hyogo (Japan)
  • 2. Univ. of Hyogo, Laboratory of Advanced Science and Technology for Industry, Kamigori, Hyogo (Japan)

Description

The effects of laser plasma X-ray (LPX) irradiation on amorphous silicon (a-Si) film structure and the density of states around the edge of the valence and conduction bands were investigated for low-temperature crystallization. An LPX with a photon energy of 115 eV was generated by a Nd:YAG excitation laser using solid Xe. The Raman spectra of a-Si films were not changed by LPX irradiation. However, the optical transmittance of a-Si film was increased by LPX irradiation at approximately 570 nm. This phenomenon relates to the movement of Si atoms to the quasi-nuclei phase in a-Si film. (author)

Availability note (English)

Available from http://dx.doi.org/10.1143/JJAP.48.050208

Additional details

Identifiers

Publishing Information

Journal Title
Japanese Journal of Applied Physics
Journal Volume
48
Journal Issue
5,pt.1
Journal Page Range
p. 050208.1-050208.2
ISSN
0021-4922

Optional Information

Notes
6 refs., 3 figs.