Published August 2019
| Version v1
Journal article
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD
Creators
- 1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
- 2. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
Description
The mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum-dot density of 4 × 1010 cm–2 is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 μm at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm2.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors (Woodbury, N.Y., Print)
- Journal Volume
- 53
- Journal Issue
- 8
- Journal Page Range
- p. 1138-1142
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51109077
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; CRYOGENIC FLUIDS; EPITAXY; GALLIUM ARSENIDES; HYDRIDES; INDIUM ARSENIDES; LASERS; NITROGEN; OPTICAL PUMPING; POWER DENSITY; QUANTUM DOTS; SILICON OXIDES; STIMULATED EMISSION; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; WAVELENGTHS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; FLUIDS; GALLIUM COMPOUNDS; HYDROGEN COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; PUMPING; SILICON COMPOUNDS; SURFACE COATING; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2019 Pleiades Publishing, Ltd.