Published May 21, 2009 | Version v1
Journal article

The structure of hybrid radial superlattices

  • 1. Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany)
  • 2. Max-Planck-Institute for Solid State Research, Heisenbergstr. 1, D-70569 Stuttgart (Germany)
  • 3. Max-Planck-Institute for Metal Research, Heisenbergstr. 3, D-70569 Stuttgart (Germany)

Description

A new class of integrative radial crystals (Krause et al 2006 Phys. Rev. Lett. 96 165502) and radial superlattices (RSLs) (Deneke et al 2004 Appl. Phys. Lett. 84 4475) has been realized by the roll-up of semiconductor-based hybrid layer systems on a substrate surface (Prinz et al 2000 Physica E 6 828, Schmidt and Eberl 2001 Nature 410 168). After a brief overview of different approaches to realize hybrid superlattices, we review the structure of semiconductor-based radial crystals and RSLs, and provide in-depth insight into the formation of these hybrid multilayer systems. Besides various transmission electron microscopy investigations, x-ray techniques to determine the lattice parameters, strain and mismatch are discussed. The overview is meant to provide a comprehensive structural summary of semiconductor/oxide, semiconductor/organic as well as semiconductor/metal hybrid RSLs at the current state of research. Furthermore, we focus on different interface types found in RSLs. Results from laterally resolved chemical analysis techniques are discussed to complete this review paper. (topical review)

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/42/10/103001

Additional details

Identifiers

DOI
10.1088/0022-3727/42/10/103001;
PII
S0022-3727(09)78371-8;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
42
Journal Issue
10
Journal Page Range
[16 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41060784
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHEMICAL ANALYSIS; CRYSTALS; LATTICE PARAMETERS; LAYERS; METALS; OXIDES; SEMICONDUCTOR MATERIALS; SUBSTRATES; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION
Descriptors DEC
CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; IONIZING RADIATIONS; MATERIALS; MICROSCOPY; OXYGEN COMPOUNDS; RADIATIONS