Analysis of the dopant distribution in Co-deposited organic thin films by scanning transmission electron microscopy
- 1. Center of Nanotechnology and Nanoscience, Universidad de las Fuerzas Armadas ESPE, Sangolqui 171-5-31B (Ecuador)
- 2. DIMAT—INMETRO, Xerém, Duque de Caxias, RJ 25250-020 (Brazil)
- 3. Department of Physics, Pontifícia Universidade Católica do Rio de Janeiro, PUC-Rio, Rio de Janeiro, RJ 22453-970 (Brazil)
Description
Organic light-emitting diodes using phosphorescent dyes (PHOLEDs) have excellent performance, with internal quantum efficiencies approaching 100%. To maximize their performance, PHOLED devices use a conductive organic host material with a sufficiently dispersed phosphorescent guest to avoid concentration quenching. Fac-tris(2-phenylpyridine) iridium, [Ir(ppy)3] is one of the most widely used green phosphorescent organic compounds. In this work, we used scanning transmission electron microscopy (STEM) equipped with HAADF (high-angle annular dark-field) and EDS (energy dispersive X-ray spectroscopy) detectors to analyze the distribution of the [Ir(ppy)3] concentration in the host material. This analysis technique, employed for the first time in co-deposited organic thin films, can simultaneously obtain an image and its respective chemical information, allowing for definitive characterization of the distribution and morphology of [Ir(ppy)3]. The technique was also used to analyze the effect of the vibration of the substrate during thermal co-deposition of the [Ir(ppy)3] molecules into an organic matrix. - Highlights: • We present a methodology to analyze the dopant distribution in organic thin films. • The method combines HAADF-STEM imaging and EDS X-ray spectroscopy. • Ir(ppy)3 dopant was co-deposited into Spiro2-CBP organic matrix. • The dopant was co-deposited with and without substrate vibration. • Images and chemical information of the dopant were simultaneously obtained.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2015.08.057Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2015.08.057;
- PII
- S0040-6090(15)00834-2;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 596
- Journal Page Range
- p. 39-44
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 42. international conference on metallurgical coatings and thin films
- Acronym
- ICMCTF 2015
- Dates
- 20-24 Apr 2015
- Place
- San Diego, CA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48020682
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CONCENTRATION RATIO; DEPOSITION; DOPED MATERIALS; IMAGES; IRIDIUM; LIGHT EMITTING DIODES; MATRIX MATERIALS; MOLECULES; QUANTUM EFFICIENCY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VISIBLE RADIATION; X RADIATION; X-RAY SPECTROSCOPY
- Descriptors DEC
- DIMENSIONLESS NUMBERS; EFFICIENCY; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; FILMS; IONIZING RADIATIONS; MATERIALS; METALS; MICROSCOPY; PLATINUM METALS; RADIATIONS; REFRACTORY METALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTROSCOPY; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.