Published January 2019 | Version v1
Journal article

First principles calculations of the adsorption and migration behaviors of N atoms on the H-terminated diamond (0 0 1) surface

  • 1. School of Mechanical Engineering, Inner Mongolia University of Science and Technology, Baotou, Inner Mongolia, 014010, People's Republic of (China)

Description

In this paper, the adsorption and migration behaviors of nitrogen (N) atoms on the hydrogen -terminated diamond (0 0 1) surface [H-Ter-D (0 0 1) surface] were investigated. The adsorption energy, the electron charge and the magnetic moment were calculated through first principles methods. The investigation results show that on the fully H-Ter-D (0 0 1) surface, all surface C atoms have saturated bonds. However, the N atom can abstract the H atom from a surface carbon atom nearby or lead to the bond breaking of the dimer carbon atoms to form bonds with the surface carbon atoms. The maximum energy of adsorption reaches to 3.47 eV, corresponding to a stable configuration structure. The charge analysis and the density of state analysis further reveal that the N atom adsorbed has unpaired electrons, which provides the opportunity for adsorption of CH radicals. On the H-Ter-D (0 0 1) surface with one open radical site (1ORS) slab, the N atom can abstract the H atom from a surface carbon atom nearby and bond with the dimer carbon atoms. The adsorption energy rises to 4.85 eV. On the H-Ter-D (0 0 1) surface with the 2ORS slab, the activation energy for a N atom to migrate along the dimer chain to the next dimer is 1.31 eV. Moreover, the adsorption of the N atom on the 1ORS surface promotes the adsorption of a C atom nearby and improves the ability of C atom migration, which is beneficial for the growth of the diamond grains. According to the charge transform analysis, the electronegativity of N atoms plays an important role in their adsorption behaviors. In addition, when the N atom has been adsorbed on the H-Ter-D (0 0 1) surface, it could still be abstracted by the other deposited N atoms; this phenomenon may be the reason for a low deposition efficiency of N atoms in the N-doped diamond films.

Additional details

Identifiers

DOI
10.1016/j.apsusc.2018.08.251;
PII
S0169433218323948;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
463
Journal Page Range
p. 668-678
ISSN
0169-4332
CODEN
ASUSEE

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
55041913
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ACTIVATION ENERGY; ADSORPTION; ATOMS; DENSITY OF STATES; DIAMONDS; DIMERS; DOPED MATERIALS; ELECTRONEGATIVITY; ELECTRONS; HYDROGEN; MAGNETIC MOMENTS; NITROGEN; SURFACES; THIN FILMS
Descriptors DEC
CARBON; ELEMENTARY PARTICLES; ELEMENTS; ENERGY; FERMIONS; FILMS; LEPTONS; MATERIALS; MINERALS; NONMETALS; SORPTION

Optional Information

Copyright
Copyright (c) 2018 Elsevier B.V. All rights reserved.