Experimental data about dechanneling and channel stopping power

Abstract The dechanneling probability for a He+ particle beam which is used for backsattering experiments was investigated at various experimental parameters. These parameters used to get a relation between dechanneling probability and disorder density are stripping depth, annealing temperature, element and dose of the particles which caused the lattice defects by implantation. The relation between the stopping power for a He+ particle beam incident along a random direction and incident along a (100) channel direction was measured on epitaxial layers of silicon on spinel and silicon on sapphire.