Published January 26, 2009
| Version v1
Journal article
Epitaxy of Ge-Sb-Te phase-change memory alloys
Creators
- 1. Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
- 2. Center for Applied Near-Field Optics Research, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan)
Description
The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge2Sb2Te5 composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 deg. C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 deg. C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy
Additional details
Identifiers
- DOI
- 10.1063/1.3072615;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 94
- Journal Issue
- 4
- Journal Page Range
- p. 041902-041902.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051304
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; AMORPHOUS STATE; ANTIMONY ALLOYS; CRYSTAL GROWTH; GALLIUM ANTIMONIDES; GERMANIUM ALLOYS; INTERATOMIC DISTANCES; MOLECULAR BEAM EPITAXY; PHASE CHANGE MATERIALS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; TELLURIUM ALLOYS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TERNARY ALLOY SYSTEMS; THIN FILMS; X-RAY DIFFRACTION; X-RAY SPECTRA
- Descriptors DEC
- ALLOY SYSTEMS; ALLOYS; ANTIMONIDES; ANTIMONY COMPOUNDS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; DISTANCE; EPITAXY; FILMS; GALLIUM COMPOUNDS; LASER SPECTROSCOPY; MATERIALS; PNICTIDES; SCATTERING; SORPTION; SPECTRA; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2009 American Institute of Physics