Stabilization of orientation of AuGa0 -acceptor Jahn-Teller distortions in GaAs at low temperatures and reorientation of the center under recombination

Peculiarities of the behavior of the photoluminescence band of AuGa0 tetragonal Jahn-Teller effect acceptor in GaAs under pressures along [001] axis in ∼ 2-77 K temperature range are investigated. It is shown that under not very high pressure and temperature up to ∼ 25 K the center orientation inequilibrium conditions in 'frozen' and can change only due to a recombination-stimulated process. At higher temperatures thermoactivation reorientation of centers in neutral state becomes possible. Time constant of this reorientation at ∼ 35 K and pressures lower ∼ 1 kbar is 10-5-2x10-4s. AuGa0BT deformation potential constant is in the range of 3-4 eV, height of potential barrier between the states of the center with different orientations at zero and small pressures equals 35 ±7 meV and decreases as pressure grows up to 9 kbar. The dependences of center alignment parameter on pressure during recombination-stimulated reorientation is determined