Published April 2009 | Version v1
Journal article Metadata-only

Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation

Creators

  • 1. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 300, Taiwan (China)

Description

The electrostatic integrity for UTB GeOI MOSFETs is examined comprehensively by using an analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of the buried oxide thickness (TBOX) and back-gate bias (Vback-gate) on the electrostatic integrity of GeOI devices is also examined

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/24/4/045017

Additional details

Identifiers

DOI
10.1088/0268-1242/24/4/045017;
PII
S0268-1242(09)93141-8;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
24
Journal Issue
4
Journal Page Range
[7 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44091810
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANALYTICAL SOLUTION; MOSFET; OXIDES; POISSON EQUATION; SIMULATION
Descriptors DEC
CHALCOGENIDES; DIFFERENTIAL EQUATIONS; EQUATIONS; FIELD EFFECT TRANSISTORS; MATHEMATICAL SOLUTIONS; MOS TRANSISTORS; OXYGEN COMPOUNDS; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS