Effect of electron heating on the screw instability in multivalley semiconductors

The problem of the effect on a zone structure of semiconductors on the helical instability, which arises in an electtron-hole plasma in sufficiently high electric and magnetic fields, is investigated. The paper is devoted to the theoretical and experimental study of the oscillistor phenomenon in heating electrical fields. All calculations are performed for silicon. Experiments pave been conducted with p-Si samples at 77 K. An electron-hole plasma has been produced with the help of injecting contacts. The results obtained testify to the possibility of studing the valley-to-valley redistribution occurring in semiconductors in high electric fields by examining the main characteristics of the oscillistor