Published July 1, 2010 | Version v1
Journal article

An integrated multiple silicon drift detector system for transmission electron microscopes

  • 1. FEI Company, Achtseweg Noord 5, 5600 KA Eindhoven (Netherlands)
  • 2. PN Sensor GmbH, Otto-Hahn-Ring 6, D-81739 Munich (Germany)
  • 3. Bruker AXS Microanalysis GmbH, Schwarzschildstr. 12, 12489 Berlin (Germany)

Description

A new EDX system, consisting of multiple SDDs has been developed for an FEI 200kV TEM/STEM in which the SDDs, designed by PN Sensor with a total collection angle approaching 1 srad has been obtained by placing 4 SDD's symmetrically around the electron beam axis in the objective lens chamber. The massive increase in solid angle of collection compared to previous designs in S/TEMs leads to a huge reduction in the time for EDX mapping. First results from the detector are reported.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/241/1/012015

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
241
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
Electron Microscopy and Analysis Group Conference 2009
Acronym
EMAG 2009
Dates
8-11 Sep 2009
Place
Sheffield (United Kingdom)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42054086
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DESIGN; ELECTRON BEAMS; ELECTRON DRIFT; ELECTRON MICROSCOPES; LENSES; MAPPING; SENSORS; SI SEMICONDUCTOR DETECTORS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
BEAMS; ELECTRON MICROSCOPY; LEPTON BEAMS; MEASURING INSTRUMENTS; MICROSCOPES; MICROSCOPY; PARTICLE BEAMS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS