Published February 2018 | Version v1
Journal article

Effects of Ga doping on the electric and magnetic properties of DyMn1−xGaxO3

  • 1. Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
  • 2. HuBei Key Laboratory of Mine Environmental Pollution Control and Remediation, HuBei Polytechnic University, Huangshi 435003 (China)
  • 3. School of Physics, HuBei Polytechnic University, Huangshi 435003 (China)

Description

Ga3+ for Mn3+ substitution in multiferroic DyMn1−xGaxO3(x = 0, 0.02, 0.05, 0.1, 0.2, 0.3 and 0.4) has been performed to study the change on Mn3+ ordering, which also influences on the ordering of Dy3+. The samples are pure and their dielectric constant, electric polarization and magnetic properties have been investigated. When the content of Ga3+ increases above 0.1, multiferroic properties completely disappear. These results indicate that Ga3+ for Mn3+ substitution in DyMnO3 bulk can reduce the exchange interactions of JMn−Mn, JDy−Mn and the bond angle of Mn-O-Mn, while the electric polarization is observed to decrease rapidly, even for small Ga doping, and the anomaly at low T in P(T) associated with the Dy ordering is no longer observed for x = 0.05.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2017.10.053

Additional details

Identifiers

DOI
10.1016/j.physb.2017.10.053;
PII
S092145261730786X;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
530
Journal Page Range
p. 49-52
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.