Plasmochemical etching processes of thin films studied by molecular spectroscopy

Molecular spectroscopy (emission spectroscopy in the visible and ultraviolet regions and infrared absorption spectroscopy) has been used to study the mechanism and kinetics of the processes of etching and removal of thin films in the high-frequency gas discharge plasma at low pressures and in different gas media. Basic plasma parameters such as electron concentration and electron temperature have been experimentally determined. The kinetic processes were shown to be effectively studied by recording the time variations of the atomic and molecular spectral line intensities in the plasmochemical processes of the treated surfaces