Published February 11, 2015
| Version v1
Journal article
Overshoot effect and inflexion characteristics in transient electroluminescence of hybrid phosphorescent OLEDs
- 1. Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, Beijing, People's Republic of China (China)
Description
The electroluminescence (EL) transient responses of Ir(ppy)3:CBP-based hybrid organic light emitting diodes (OLEDs) have been investigated. An inflexion point phenomenon of the EL fall time (tf) response in phosphorescent OLEDs with a hole blocking layer (HBL) was found. It can be attributed to the quantity variation of accumulated carriers at internal interfaces. The overshoot effect in transient EL is also analyzed. The phenomenon that the EL overshoot time (ts) extended as the pulsed voltage increased is found for the first time. It is deduced that this phenomenon is related with triplet excitons’ long lifetime. It is also demonstrated that the delay time (td) response is mainly influenced by the hole injection barrier of OLEDs. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/48/5/055103Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 48
- Journal Issue
- 5
- Journal Page Range
- [6 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46055653
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGE CARRIERS; DEPLETION LAYER; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; EXCITONS; HOLES; INTERFACES; LIFETIME; LIGHT EMITTING DIODES; PHOSPHORESCENCE; TIME DELAY; TRANSIENTS; TRIPLETS; VARIATIONS
- Descriptors DEC
- EMISSION; LAYERS; LUMINESCENCE; MULTIPLETS; PHOTON EMISSION; QUASI PARTICLES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES