Published 1998
| Version v1
Miscellaneous
In-situ studies of the MBE growth of III-V compounds on an atomistic scale and comparison with theory
Creators
- 1. Interdisciplinary Research Centre for Semiconductor Materials, The Blacket Laboratory, Imperial College of Science, Technology and Medicine, London (United Kingdom)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- InAs,GaAs
Publishing Information
- ISBN
- 83-901181-0-6
- Imprint Title
- Abstracts of International Conference on Solid State Crystals - Materials Science and Applications
- Imprint Pagination
- 268 p.
- Journal Page Range
- p. 11
Conference
- Title
- International Conference on Solid State Crystals - Materials Science and Applications
- Dates
- 12-16 Oct 1998
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31044327
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- CRYSTAL GROWTH; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; GRAIN ORIENTATION; INDIUM ARSENIDES; MEETINGS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHOD; SCANNING TUNNELING MICROSCOPY; SPECTRAL REFLECTANCE; STRESS RELAXATION; SUBSTRATES; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MICROSCOPY; MICROSTRUCTURE; OPTICAL PROPERTIES; ORIENTATION; PHYSICAL PROPERTIES; PNICTIDES; RELAXATION; SCATTERING