Range and damage profiling after heavy ion implantation in the MeV region

Si crystals are implanted with 2 MeV O+ and Si+ ions. The ion and damage profiles are revealed by beveling. The implanted oxygen concentration is measured at the beveled surface with a microprobe. The radiation damage profile is investigated by high resolution electron microscopy. The micrographs are analysed quantitatively as far as the size and depth distribution of radiation induced clusters is concerned with a Leitz Texture-Analysis-System. The damage profile matches the ion profile in case of O+ implantation, yet both ranges are about 20% shallower than the LSS estimate. In case of Si+ implantation, however, the damage profile agrees with the LSS theory. (author)