Published April 1999
| Version v1
Journal article
Analysis of the surface photoabsorption signal during self-limited submonolayer growth of InP in metalorganic chemical vapor deposition
- 1. Seoul National Univ., Seoul (Korea, Republic of)
- 2. Kyunghee Univ., Seoul (Korea, Republic of)
Description
In situ, real-time monitoring of InP atomic layer epitaxy (ALE) was performed in low-pressure metalorganic chemical vapor deposition (LP-MOCVD) by surface photoabsorption (SPA). A self-limiting adsorption condition was obtained from the trimethylindium (TMIn) decomposition experiment at various conditions. It was found that the growth rate was less than 1 monolayer (ML)/cycle. From the in situ, real-time SPA measurement during InP ALE, the incomplete PH3 decomposition on the methyl-terminated In surface was attributed to the self-limiting submonolayer growth per cycle
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 34
- Journal Issue
- Suppl
- Series
- 9 refs, 5 figs
- Journal Page Range
- p. 25-27
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 34074608
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; CHEMICAL VAPOR DEPOSITION; EPITAXY; INDIUM PHOSPHIDES; LAYERS
- Descriptors DEC
- CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SORPTION; SURFACE COATING