Published February 2004 | Version v1
Journal article Metadata-only

Molecular-beam epitaxy doping of gallium nitride with magnesium from ammonia

Creators

  • 1. St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251 (Russian Federation)
  • 2. Soft-Impact, P.O. Box 83, St. Petersburg, 194156 (Russian Federation)

Description

A model of doping with magnesium is verified for molecular-beam epitaxy of gallium nitride using ammonia as a source of Group V reactive component. The good quantitative agreement with experiment makes it possible to compare the p-doping efficiency for molecular-beam epitaxy from plasma-activated nitrogen and ammonia within this model. In this case, it is possible to attain a high Mg content in the crystal due to the increased V/III ratio in the incident flows.

Additional details

Publishing Information

Journal Title
Semiconductors
Journal Volume
38
Journal Issue
2
Journal Page Range
p. 148-149
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35094715
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Translation
Descriptors DEI
AMMONIA; COMPARATIVE EVALUATIONS; GALLIUM NITRIDES; MAGNESIUM; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA; SEMICONDUCTOR MATERIALS
Descriptors DEC
ALKALINE EARTH METALS; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; EVALUATION; GALLIUM COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; MATERIALS; METALS; NITRIDES; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; NONMETALS; PNICTIDES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 38, 151-152 (No. 2, 2004); (c) 2004 MAIK ''Nauka / Interperiodica''.